Kim Zee Hwan, Ahn Sung-Hyun, Liu Bing, Leone Stephen R
Department of Chemistry and Center for Electro- and Photo-Responsive Molecules, Korea University, Anam-Dong, Seongbuk-Gu, Seoul 136-701, Republic of Korea.
Nano Lett. 2007 Aug;7(8):2258-62. doi: 10.1021/nl070753k. Epub 2007 Jul 3.
Scattering-type apertureless near-field microscopy (ANSOM) provides high-resolution dielectric maps of indium gallium nitride (InGaN) semiconductor nanoparticles at visible (633 nm) wavelengths. A specific size-dependent contrast reversal is observed in the ANSOM images of InGaN nanoparticles grown on a layer of gallium nitride (GaN). Model calculations demonstrate that the observed contrast reversal is the result of the competition between the tip-particle versus tip-substrate dipolar coupling.
散射型无孔径近场显微镜（ANSOM）能够在可见光（633纳米）波长下提供氮化铟镓（InGaN）半导体纳米颗粒的高分辨率介电图谱。在生长于氮化镓（GaN）层上的InGaN纳米颗粒的ANSOM图像中观察到了一种特定的尺寸依赖性对比度反转。模型计算表明，观察到的对比度反转是尖端 - 颗粒与尖端 - 衬底偶极耦合之间竞争的结果。
