School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, USA.
Nano Lett. 2011 Feb 9;11(2):535-40. doi: 10.1021/nl103418q. Epub 2010 Dec 20.
High-quality, ordered nanopores in semiconductors are attractive for numerous biological, electrical, and optical applications. Here, GaN nanorods with continuous pores running axially through their centers were grown by organometallic vapor phase epitaxy. The porous nanorods nucleate on an underlying (0001)-oriented GaN film through openings in a SiN(x) template that are milled by a focused ion beam, allowing direct placement of porous nanorods. Nanopores with diameters ranging from 20-155 nm were synthesized with crystalline sidewalls.
高质量、有序的半导体纳米孔在生物、电气和光学等诸多领域具有吸引力。本工作采用有机金属气相外延法在沿轴向贯穿中心的 GaN 纳米棒中生长出连续的孔。多孔纳米棒通过聚焦离子束刻蚀的 SiN(x) 模板中的开口在下方的（0001）取向 GaN 薄膜上成核，从而允许直接放置多孔纳米棒。合成的纳米孔具有从 20nm 到 155nm 的直径，且具有结晶状的侧壁。
