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原子层沉积和化学气相沉积前驱体选择方法在锶和钡前驱体中的应用。

Atomic layer deposition and chemical vapor deposition precursor selection method application to strontium and barium precursors.

作者信息

Holme Timothy P, Prinz Fritz B

机构信息

Mechanical Engineering Department, Stanford University, 440 Escondido Mall Stanford, California 94305, USA.

出版信息

J Phys Chem A. 2007 Aug 23;111(33):8147-51. doi: 10.1021/jp062568l. Epub 2007 Jul 27.

Abstract

A new selection method for atomic layer deposition (ALD) or chemical vapor deposition (CVD) precursors is proposed and tested. Density functional theory was used to simulate Sr and Ba precursors, and several precursors were selected and used to grow films via ALD as test cases for the precursor selection method. The precursors studied were M(x)2 (M = Sr, Ba; x = tetramethylheptanedionate (tmhd), acetylacetonate (acac), hexafluoroacetylacetonate (hfac), cyclopentadienyl (H(5)C(5)), pentamethylcyclopentadienyl (Me(5)C(5)), n-propyltetramethylcyclopentadienyl (PrMe(4)C(5)), tris(isopropylcyclopentadienyl) (Pr(3)(i)H(2)C(5)), tris(isopropylcyclopentadienyl)(THF) (Pr(3)(i)H(2)C(5))(OC(4)H(8)), tris(isopropylcyclopentadienyl)(THF)2 (Pr(3)(i)H(2)C(5))(OC(4)H(8))2, tris(tert-butylcyclopentadienyl) (Bu(3)(t)H(2)C(5)), tris(tert-butylcyclopentadienyl)(THF) (Bu(3)(t)H(2)C(5))(OC(4)H(8)), heptafluoro-2,2-dimethyl-3,5-octanedionate (fod)). The energy required to break bonds between the metal atom and the ligands was calculated to find which precursors react most readily. In the case of tmhd and Cp precursors, the energy required to break bonds in the precursor ligand was studied to evaluate the most likely mechanism of carbon incorporation into the film. Trends for Ba and Sr followed each other closely, reflecting the similar chemistry among alkaline earth metals. The diketonate precursors have stronger bonds to the metals than the Cp precursors, but weaker bonds within the ligand, explaining the carbon contamination found in experimentally grown films. Atomic layer deposition of SrO was tested with Sr(tmhd)2 and Sr(PrMe(4)Cp)2 and oxygen, ozone, and water as oxygen sources. No deposition was measured with tmhd precursors, and SrO films were deposited with PrMe(4)Cp with a source temperature of 200 degrees C and at substrate temperatures between 250 and 350 degrees C with growth rates increasing for oxygen sources in this order: O2 < H2O < O2 + H2O. The experimental results support the predictions based upon calculations: PrMe(4)Cp and Me(5)Cp precursors are expected to be the best precursors among those studied for Ba and Sr film growth.

摘要

提出并测试了一种用于原子层沉积(ALD)或化学气相沉积(CVD)前驱体的新选择方法。采用密度泛函理论模拟了Sr和Ba的前驱体,并选择了几种前驱体通过ALD生长薄膜,作为前驱体选择方法的测试案例。所研究的前驱体为M(x)2(M = Sr、Ba;x = 四甲基庚二酮酸酯(tmhd)、乙酰丙酮(acac)、六氟乙酰丙酮(hfac)、环戊二烯基(H(5)C(5))、五甲基环戊二烯基(Me(5)C(5))、正丙基四甲基环戊二烯基(PrMe(4)C(5))、三(异丙基环戊二烯基)(Pr(3)(i)H(2)C(5))、三(异丙基环戊二烯基)(四氢呋喃)(Pr(3)(i)H(2)C(5))(OC(4)H(8))、三(异丙基环戊二烯基)(四氢呋喃)2(Pr(3)(i)H(2)C(5))(OC(4)H(8))2、三(叔丁基环戊二烯基)(Bu(3)(t)H(2)C(5))、三(叔丁基环戊二烯基)(四氢呋喃)(Bu(3)(t)H(2)C(5))(OC(4)H(8))、七氟-2,2-二甲基-3,5-辛二酮酸酯(fod))。计算了金属原子与配体之间断键所需的能量,以找出最容易发生反应的前驱体。对于tmhd和Cp前驱体,研究了前驱体配体中断键所需的能量,以评估碳掺入薄膜的最可能机制。Ba和Sr的趋势彼此密切相关,反映了碱土金属之间相似的化学性质。二酮酸酯前驱体与金属的键比Cp前驱体更强,但配体内的键较弱,这解释了在实验生长薄膜中发现的碳污染。用Sr(tmhd)2和Sr(PrMe(4)Cp)2以及氧气、臭氧和水作为氧源对SrO进行了原子层沉积测试。使用tmhd前驱体未检测到沉积,在源温度为200℃且衬底温度在250至350℃之间时,用PrMe(4)Cp沉积了SrO薄膜,氧源的生长速率按此顺序增加:O2 < H2O < O2 + H2O。实验结果支持基于计算的预测:在研究的用于Ba和Sr薄膜生长的前驱体中,PrMe(4)Cp和Me(5)Cp前驱体预计是最佳前驱体。

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