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含给体功能化烷氧基配体的 Ce(IV) 配合物:用于化学气相沉积 CeO2 的改进前体。

Ce(IV) complexes with donor-functionalized alkoxide ligands: improved precursors for chemical vapor deposition of CeO2.

机构信息

Department of Chemistry, Donnan and Robert Robinson Laboratories, University of Liverpool, Crown Street, Liverpool, L69 7ZD, UK.

出版信息

Inorg Chem. 2011 Nov 21;50(22):11644-52. doi: 10.1021/ic201593s. Epub 2011 Oct 21.

Abstract

Thin films of ceria (CeO(2)) have many applications, and their synthesis by liquid-injection MOCVD (metal-organic chemical vapor deposition) or ALD (atomic layer deposition) requires volatile precursor compounds. Here we report the synthesis of a series of homoleptic and heteroleptic Ce(IV) complexes with donor-functionalized alkoxide ligands mmp (1-methoxy-2-methylpropan-2-olate), dmap (1-(dimethylamino)propan-2-olate), and dmop (2-(4,4-dimethyl-4,5-dihydrooxazol-2-yl)propan-2-olate) and their potential as precursors for MOCVD and ALD of CeO(2). New complexes were synthesized by alcohol exchange reactions with [Ce(OBu(t))(4)]. [Ce(mmp)(4)] and [Ce(dmap)(4)] were both found to be excellent precursors for liquid-injection MOCVD of CeO(2), depositing high purity thin films with very low carbon contamination, and both have a large temperature window for diffusion controlled growth (350-600 °C for [Ce(mmp)(4)]; 300-600 °C for [Ce(dmap)(4)]). [Ce(mmp)(4)] is also an excellent precursor for liquid-injection ALD of CeO(2) using H(2)O as oxygen source and demonstrates self-limiting growth from 150 to 350 °C. [Ce(dmap)(4)] has lower thermal stability than [Ce(mmp)(4)] and does not show self-limiting growth in ALD. Heteroleptic complexes show a tendency to undergo ligand redistribution reactions to form mixtures in solution and are unsuitable as precursors for liquid-injection CVD.

摘要

氧化铈(CeO(2))薄膜有许多应用,其通过液体注射 MOCVD(金属有机化学气相沉积)或 ALD(原子层沉积)合成需要挥发性前体化合物。在这里,我们报告了一系列同核和杂核 Ce(IV)配合物的合成,这些配合物具有给体官能化的烷氧基配体 mmp(1-甲氧基-2-甲基-2-丙醇)、dmap(1-(二甲基氨基)-2-丙醇)和 dmop(2-(4,4-二甲基-4,5-二氢恶唑-2-基)-2-丙醇),并探讨了它们作为 MOCVD 和 ALD 合成 CeO(2)前体的潜力。新的配合物是通过醇交换反应与[Ce(OBu(t))(4)]合成的。发现[Ce(mmp)(4)]和[Ce(dmap)(4)]都是 CeO(2)液体注射 MOCVD 的优秀前体,沉积出高纯薄膜,且碳污染极低,扩散控制生长的温度窗口很大([Ce(mmp)(4)]为 350-600°C;[Ce(dmap)(4)]为 300-600°C)。[Ce(mmp)(4)]也是使用 H(2)O 作为氧源的 CeO(2)液体注射 ALD 的优秀前体,在 150-350°C 之间表现出自限性生长。[Ce(dmap)(4)]的热稳定性低于[Ce(mmp)(4)],且在 ALD 中不表现出自限性生长。杂核配合物倾向于发生配体重排反应,在溶液中形成混合物,不适合作为液体注射 CVD 的前体。

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