Nodop D, Limpert J, Hohmuth R, Richter W, Guina M, Tünnermann A
Institute of Applied Physics, Friedrich-Schiller-University of Jena, Albert-Einstein-Strasse 15, 07745 Jena, Germany.
Opt Lett. 2007 Aug 1;32(15):2115-7. doi: 10.1364/ol.32.002115.
We present passively Q-switched microchip lasers with items bonded by spin-on-glass glue. Passive Q-switching is obtained by a semiconductor saturable absorber mirror. The laser medium is a Nd:YVO(4) crystal. These lasers generate pulse peak powers up to 20 kW at a pulse duration as short as 50 ps and pulse repetition rates of 166 kHz. At 1064 nm, a linear polarized transversal and longitudinal single-mode beam is emitted. To the best of our knowledge, these are the shortest pulses in the 1 microJ energy range ever obtained with passively Q-switched microchip lasers. The quasi-monolithic setup ensures stable and reliable performance.
我们展示了采用旋涂玻璃胶粘结部件的被动调Q微芯片激光器。被动调Q是通过半导体可饱和吸收镜实现的。激光介质为Nd:YVO₄晶体。这些激光器在脉冲持续时间短至50 ps且脉冲重复频率为166 kHz时，可产生高达20 kW的脉冲峰值功率。在1064 nm波长处，发射出线性偏振的横向和纵向单模光束。据我们所知，这些是被动调Q微芯片激光器在1 μJ能量范围内获得的最短脉冲。这种准单片结构确保了稳定可靠的性能。
