Rath Arup K, Pal Amlan J
Indian Association for the Cultivation of Science, Department of Solid State Physics and Centre for Advanced Materials, Jadavpur, Kolkata 700032, India.
Langmuir. 2007 Sep 11;23(19):9831-5. doi: 10.1021/la701132f. Epub 2007 Aug 14.
Fluorescein sodium, which does not exhibit electrical bistability in thin films, can be switched to a high conducting state by the introduction of carbon nanotubes as channels for carrier transport. Thin films based on fluorescein sodium/carbon nanotubes display memory switching phenomenon among a low conducting state and several high conducting states. Read-only and random-access memory applications between the states resulted in multilevel memory in these systems. Results in thin films and in a monolayer (deposited via layer-by-layer assembly) show that instead of different molecular conformers, multilevel conducting states arise from the different density of high conducting fluorescein molecules.
在薄膜中不表现出电双稳性的荧光素钠，通过引入碳纳米管作为载流子传输通道，可切换到高导电状态。基于荧光素钠/碳纳米管的薄膜在低导电态和几个高导电态之间显示出记忆开关现象。这些状态之间的只读和随机存取存储器应用在这些系统中产生了多级存储器。薄膜和单层膜（通过逐层组装沉积）的结果表明，多级导电态并非源于不同的分子构象，而是源于高导电荧光素分子的不同密度。
