Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, People's Republic of China.
Nanotechnology. 2010 Jan 29;21(4):045202. doi: 10.1088/0957-4484/21/4/045202. Epub 2009 Dec 10.
In this paper, the resistive switching characteristics in a Cu/HfO(2):Cu/Pt sandwiched structure is investigated for multilevel non-volatile memory applications. The device shows excellent resistive switching performance, including good endurance, long retention time, fast operation speed and a large storage window (R(OFF)/R(ON)>10(7)). Based on the temperature-dependent test results, the formation of Cu conducting filaments is believed to be the reason for the resistance switching from the OFF state to the ON state. By integrating the resistive switching mechanism study and the device fabrication, different resistance values are achieved using different compliance currents in the program process. These resistance values can be easily distinguished in a large temperature range, and can be maintained over 10 years by extrapolating retention data at room temperature. The integrated experiment and mechanism studies set up the foundation for the development of high-performance multilevel RRAM.
本文研究了 Cu/HfO2:Cu/Pt 三明治结构中的电阻开关特性，以期将其应用于多电平非易失性存储器。该器件表现出优异的电阻开关性能，包括良好的耐久性、长保持时间、快速操作速度和大存储窗口（ROFF/RON>107）。基于温度相关测试结果，认为 Cu 导丝的形成是电阻从关态切换到开态的原因。通过整合电阻开关机制研究和器件制造，在编程过程中使用不同的合规电流可以实现不同的电阻值。这些电阻值在较大温度范围内可以轻松区分，并通过在室温下对保持数据进行外推，可以保持 10 年以上。集成实验和机制研究为高性能多电平 RRAM 的发展奠定了基础。
