Science. 1993 Apr 2;260(5104):40-6. doi: 10.1126/science.260.5104.40.
The possibility induction of light emission from silicon, an indirect bandgap material in which radiative transitions are unlikely, raises several interesting and technologically important possibilities, especially the fabrication of a truly integrated optoelectronic microchip. In this article, the natural considerations that constrain silicon from emitting light efficiently are examined, as are several engineered solutions to this limitation. These include intrinsic and alloy-induced luminescence; radiatively active impurities; quantum-confined structures, including zone folding and the recent developments in porous silicon; and a hybrid approach, the integration of direct bandgap materials onto silicon.
硅是间接带隙材料，辐射跃迁不太可能发生，但其发光的可能性引发了一些有趣且具有重要技术意义的可能性，尤其是制造真正集成的光电微芯片。本文研究了限制硅高效发光的自然因素，以及几种克服这一限制的工程解决方案。这些方案包括本征和合金诱导发光；辐射活性杂质；量子限制结构，包括能带折叠和多孔硅的最新发展；以及一种混合方法，即将直接带隙材料集成到硅上。
