Science. 1992 Feb 28;255(5048):1088-92. doi: 10.1126/science.255.5048.1088.
The results of kinetic simulations of the aggregates formed during the deposition of atoms on a semiconductor surface are reviewed. Because the kinetic parameters are poorly known and the accuracy of the existing interatomic potentials has not been sufficiently tested, the goal has been to reach a qualitative understanding of the formation of unusual patterns during growth, such as the segregation of aluminum during the growth of aluminum-gallium-arsenide (AlGaAs) coherent tilted superlattices and the formation of thin, long, and parallel islands during the deposition of Si on an Si(100) surface. Kinetic mechanisms for these phenomena are proposed.
回顾了在半导体表面沉积原子过程中形成的聚集体的动力学模拟结果。由于动力学参数知之甚少，并且现有原子间势的准确性尚未得到充分验证，因此目标是定性地了解生长过程中形成不寻常图案的机制，例如在砷化镓铝（AlGaAs）相干倾斜超晶格生长过程中铝的偏析，以及在硅（100）表面沉积硅时形成薄、长且平行的岛。提出了这些现象的动力学机制。
