Science. 1992 Oct 9;258(5080):271-4. doi: 10.1126/science.258.5080.271.
Multiple-junction structures were formed, on a microscopic scale, at room temperature, by the application of a strong electric field across originally homogeneous crystals of the ternary chalcopyrite semiconductor CulnSe(2). After removal of the electric field, the structures were examined with electron beam-induced current microscopy and their current-voltage characteristics were measured. Bipolar transistor action was observed, indicating that sharp bulk junctions can form in this way at low ambient temperatures. The devices are stable under normal (low-voltage) operating conditions. Possible causes for this effect, including electromigration and electric field-assisted defect reactions, are suggested.
在室温下，通过在原本均匀的三元黄铜矿半导体 CulnSe(2)晶体上施加强电场，在微观尺度上形成了多个结结构。除去电场后，用电子束感生电流显微镜检查这些结构，并测量它们的电流-电压特性。观察到双极晶体管作用，表明在低温环境下可以通过这种方式形成尖锐的体结。在正常（低电压）工作条件下，这些器件是稳定的。提出了这种效应的可能原因，包括电迁移和电场辅助缺陷反应。
