Science. 1995 May 26;268(5214):1161-3. doi: 10.1126/science.268.5214.1161.
With the combination of the height sensitivity of atomic force microscopy and the strain sensitivity of transmission electron microscopy, it is shown that near singular stress concentrations can develop naturally in strained epitaxial films. These crack-like instabilities are identified as the sources of dislocation nucleation and multiplication in films of high misfit. This link between morphological instability and dislocation nucleation provides a method for studying the basic micromechanisms that determine the strength and mechanical properties of materials.
结合原子力显微镜的高度灵敏度和透射电子显微镜的应变灵敏度，研究表明，在应变外延薄膜中可以自然地产生近奇异的应力集中。这些类似裂纹的不稳定性被确定为高失配薄膜中位错成核和增殖的来源。形态不稳定性与位错成核之间的这种联系为研究决定材料强度和力学性能的基本微观机制提供了一种方法。
