Engh Anita M, Faraldo-Gómez José D, Maduke Merritt
Department of Molecular and Cellular Physiology, Stanford University School of Medicine, Stanford, CA 94305, USA.
J Gen Physiol. 2007 Oct;130(4):351-63. doi: 10.1085/jgp.200709760. Epub 2007 Sep 10.
ClC-0 is a chloride channel whose gating is sensitive to voltage, chloride, and pH. In a previous publication, we showed that the K149C mutation causes a +70-mV shift in the voltage dependence of ClC-0 fast gating. In this paper we analyze the effects of a series of mutations at K149 on the voltage and chloride dependence of gating. By fitting our data to the previously proposed four-state model for ClC-0 fast gating, we show which steps in fast-gate opening are likely to be affected by these mutations. Computational analysis of mutant ClC-0 homology models show electrostatic contributions to chloride binding that may partially account for the effects of K149 on gating. The analysis of gating kinetics in combination with the available structural information suggests some of the structural changes likely to underpin fast-gate opening.
ClC-0是一种氯离子通道,其门控对电压、氯离子和pH敏感。在之前的一篇论文中,我们表明K149C突变导致ClC-0快速门控的电压依赖性发生+70 mV的偏移。在本文中,我们分析了K149处一系列突变对门控的电压和氯离子依赖性的影响。通过将我们的数据拟合到先前提出的ClC-0快速门控的四态模型,我们展示了快速门控开放过程中的哪些步骤可能受到这些突变的影响。突变型ClC-0同源模型的计算分析显示了对氯离子结合的静电贡献,这可能部分解释了K149对门控的影响。门控动力学分析与现有结构信息相结合,提示了一些可能支撑快速门控开放的结构变化。