Gibbons Francis, Zaid Hasnah M, Manickam Mayandithevar, Preece Jon A, Palmer Richard E, Robinson Alex P G
Nanoscale Physics Research Laboratory, School of Physics and Astronomy, The University of Birmingham, Edgbaston, Birmingham B15 2TT, UK.
Small. 2007 Dec;3(12):2076-80. doi: 10.1002/smll.200700324.
Current lithographic resists depend on large polymeric materials, which are starting to limit further improvements in line-width roughness and feature size. Fullerene molecular resists use much smaller molecules to avoid this problem. However, such resists have poor radiation sensitivity. Chemical amplification of a fullerene derivative using an epoxy crosslinker and a photoacid generator is demonstrated. The sensitivity of the material is increased by two orders of magnitude, and 20-nm line widths are patterned.
