Chen X, Palmer R E, Robinson A P G
Nanoscale Physics Research Laboratory, School of Physics and Astronomy, University of Birmingham, Birmingham B15 2TT, UK.
Nanotechnology. 2008 Jul 9;19(27):275308. doi: 10.1088/0957-4484/19/27/275308. Epub 2008 May 27.
Traditionally, many lithography resists have used hazardous, environmentally damaging or flammable chemicals as casting solvent and developer. There is now a strong drive towards processes that are safer and more environmentally friendly. We report nanometre-scale patterning of a fullerene molecular resist film with electron beam lithography, using water as casting solvent and developer. Negative tone behaviour is demonstrated after exposure and development. The sensitivity of this resist to 20 keV electrons is 1.5 × 10(-2) C cm(-2). Arrays of lines with a width of 30-35 nm and pitches of 200 and 400 nm, and arrays of dots with a diameter of 40 nm and a pitch of 200 nm have been patterned at 30 keV. The etch durability of this resist was found to be ∼2 times that of a standard novolac based resist. Initial results of the chemical amplification of this material for enhanced sensitivity are also presented.
传统上，许多光刻抗蚀剂使用危险、对环境有害或易燃的化学品作为浇铸溶剂和显影剂。现在，人们强烈倾向于采用更安全、更环保的工艺。我们报告了使用水作为浇铸溶剂和显影剂，通过电子束光刻对富勒烯分子抗蚀剂膜进行纳米级图案化。曝光和显影后呈现负性显影行为。这种抗蚀剂对20 keV电子的灵敏度为1.5×10(-2) C cm(-2)。在30 keV下，已制作出宽度为30 - 35 nm、间距为200和400 nm的线条阵列，以及直径为40 nm、间距为200 nm的点阵列。发现这种抗蚀剂的抗蚀刻耐久性约为标准酚醛清漆基抗蚀剂的2倍。还展示了对该材料进行化学放大以提高灵敏度的初步结果。
