Badel Laurent, Lefort Sandrine, Brette Romain, Petersen Carl C H, Gerstner Wulfram, Richardson Magnus J E
Laboratory of Computational Neuroscience, School of Computer and Communication Sciences and Brain Institute, Lausanne, Switzerland.
J Neurophysiol. 2008 Feb;99(2):656-66. doi: 10.1152/jn.01107.2007. Epub 2007 Dec 5.
Neuronal response properties are typically probed by intracellular measurements of current-voltage (I-V) relationships during application of current or voltage steps. Here we demonstrate the measurement of a novel I-V curve measured while the neuron exhibits a fluctuating voltage and emits spikes. This dynamic I-V curve requires only a few tens of seconds of experimental time and so lends itself readily to the rapid classification of cell type, quantification of heterogeneities in cell populations, and generation of reduced analytical models. We apply this technique to layer-5 pyramidal cells and show that their dynamic I-V curve comprises linear and exponential components, providing experimental evidence for a recently proposed theoretical model. The approach also allows us to determine the change of neuronal response properties after a spike, millisecond by millisecond, so that postspike refractoriness of pyramidal cells can be quantified. Observations of I-V curves during and in absence of refractoriness are cast into a model that is used to predict both the subthreshold response and spiking activity of the neuron to novel stimuli. The predictions of the resulting model are in excellent agreement with experimental data and close to the intrinsic neuronal reproducibility to repeated stimuli.
神经元反应特性通常通过在施加电流或电压阶跃期间对电流-电压(I-V)关系进行细胞内测量来探究。在此,我们展示了在神经元呈现波动电压并发放动作电位时测量一种新型I-V曲线的方法。这种动态I-V曲线仅需几十秒的实验时间,因此很容易用于细胞类型的快速分类、细胞群体异质性的量化以及简化分析模型的生成。我们将该技术应用于第5层锥体神经元,结果表明它们的动态I-V曲线包含线性和指数成分,为最近提出的理论模型提供了实验证据。该方法还使我们能够逐毫秒地确定动作电位后神经元反应特性的变化,从而可以量化锥体神经元的动作电位后不应期。对存在和不存在不应期时I-V曲线的观察结果被纳入一个模型,该模型用于预测神经元对新刺激的阈下反应和发放活动。所得模型的预测结果与实验数据高度吻合,并且接近神经元对重复刺激的固有再现性。