Chan T-L, Tiago Murilo L, Kaxiras Efthimios, Chelikowsky James R
Center for Computational Materials, Institute for Computational Engineering and Sciences, University of Texas, Austin, Texas 78712, USA.
Nano Lett. 2008 Feb;8(2):596-600. doi: 10.1021/nl072997a. Epub 2007 Dec 23.
We studied the electronic properties of phosphorus-doped silicon nanocrystals using the real-space first-principles pseudopotential method. We simulated nanocrystals with a diameter of up to 6 nm and made a direct comparison with experimental measurement for the first time for these systems. Our calculated size dependence of hyperfine splitting was in excellent agreement with experimental data. We also found a critical nanocrystal size below which we predicted that the dopant will be ejected to the surface.
我们使用实空间第一性原理赝势方法研究了磷掺杂硅纳米晶体的电子性质。我们模拟了直径达6纳米的纳米晶体,并首次对这些体系与实验测量进行了直接比较。我们计算得到的超精细分裂的尺寸依赖性与实验数据高度吻合。我们还发现了一个临界纳米晶体尺寸,低于该尺寸时我们预测掺杂剂将会被喷射到表面。