Ishigure N, Nakano T, Enomoto H
Division of Comparative Radiotoxicology, National Institute of Radiological Sciences, Chiba, Japan.
J Radiat Res. 1991 Dec;32(4):404-16. doi: 10.1269/jrr.32.404.
A device to irradiate a monolayer of cultured cells with alpha-particles using an Am-241 alpha-source (33.4 MBq) was designed to investigate RBEs of alpha-particles in cell killing, induction of chromosome aberration, mutagenic changes and transformation. This device can be used conveniently in a common laboratory by a small number of researchers without any limitation of machine time. The device performs as follows: (1) The energy of alpha-particles at the entrance of the cell layer is 3.20 MeV with a standard deviation of 0.25 MeV, (2) the incident angle to the cell layer is 82.8 degrees with a standard deviation of 3.2 degrees, (3) the fluence rate is 4.7 x 10(5) cm-2.min-1, (4) the average LET infinity for a cell layer 5 microns thick is 138 keV/micron, (5) the average dose rate for a cell layer 5 microns thick is 0.10 Gy/min., (6) a temperature and CO2 concentration conducive to cell cultivation are maintained during irradiation.
设计了一种使用Am-241α源（33.4 MBq）对单层培养细胞进行α粒子辐照的装置，以研究α粒子在细胞杀伤、染色体畸变诱导、诱变变化和转化方面的相对生物学效应（RBE）。少数研究人员可在普通实验室方便地使用该装置，且不受机器使用时间的限制。该装置的性能如下：（1）细胞层入口处α粒子的能量为3.20 MeV，标准偏差为0.25 MeV；（2）与细胞层的入射角为82.8度，标准偏差为3.2度；（3）注量率为4.7×10⁵ cm⁻²·min⁻¹；（4）对于5微米厚的细胞层，平均无限线性能量转移（LET∞）为138 keV/微米；（5）对于5微米厚的细胞层，平均剂量率为0.10 Gy/min；（6）在辐照过程中维持有利于细胞培养的温度和二氧化碳浓度。
