Korpijärvi Ville-Markus, Leinonen Tomi, Puustinen Janne, Härkönen Antti, Guina Mircea D
Optoelectronics Research Centre, Tampere University of Technology, Korkeakoulunkatu 3, Tampere, 33720 Finland.
Opt Express. 2010 Dec 6;18(25):25633-41. doi: 10.1364/OE.18.025633.
We report power scaling experiments of a GaInNAs/GaAs-based semiconductor disk laser operating at ~1180 nm. Using a single gain chip cooled to mount temperature of ~10 °C we obtained 11 W of output power. For efficient thermal management we used a water-cooled microchannel mount and an intracavity diamond heat spreader. Laser performance was studied using different spot sizes of the pump beam on the gain chip and different output couplers. Intracavity frequency-doubling experiments led to generation of ~6.2 W of laser radiation at ~590 nm, a wavelength relevant for the development of sodium laser guide stars.
我们报告了基于GaInNAs/GaAs的半导体盘形激光器在1180 nm波长下的功率缩放实验。使用单个增益芯片冷却至10°C的安装温度，我们获得了11 W的输出功率。为了实现高效的热管理，我们使用了水冷微通道安装架和腔内金刚石散热器。使用增益芯片上泵浦光束的不同光斑尺寸和不同的输出耦合器研究了激光性能。腔内倍频实验产生了6.2 W的590 nm激光辐射，该波长与钠激光导星的发展相关。
