Saito T, Hanada T, Kitamura N, Kitamura M
Appl Opt. 1998 Apr 20;37(12):2242-4. doi: 10.1364/ao.37.002242.
By using a Mach-Zehnder interferometer, we evaluated photosensitivity in silica-based waveguides deposited by atmospheric pressure vapor deposition. Our results show that photosensitivity with ArF excimer laser irradiation was ten times greater than photosensitivity with KrF excimer laser irradiation. ArF excimer laser irradiation induced a refractive-index change of greater than 2 x 10(-3) at 1.55 mum and a birefringence between TE and TM modes of less than 6 x 10(-5). It has also been determined that the photoinduced absorption change of 90 dB/mm at 210 nm cannot account for a refractive-index change greater than 10(-3).
通过使用马赫-曾德尔干涉仪，我们评估了通过大气压气相沉积法制备的硅基波导中的光敏性。我们的结果表明，用ArF准分子激光照射时的光敏性比用KrF准分子激光照射时的光敏性大十倍。ArF准分子激光照射在1.55μm处引起的折射率变化大于2×10^(-3)，且TE和TM模式之间的双折射小于6×10^(-5)。还已确定，在210nm处90dB/mm的光致吸收变化无法解释大于10^(-3)的折射率变化。
