Grove-Rasmussen K, Jørgensen H I, Hayashi T, Lindelof P E, Fujisawa T
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan.
Nano Lett. 2008 Apr;8(4):1055-60. doi: 10.1021/nl072948y. Epub 2008 Mar 4.
A top-gated single-wall carbon nanotube is used to define three coupled quantum dots in series between two electrodes. The additional electron number on each quantum dot is controlled by top-gate voltages allowing for current measurements of single, double, and triple quantum dot stability diagrams. Simulations using a capacitor model including tunnel coupling between neighboring dots captures the observed behavior with good agreement. Furthermore, anticrossings between indirectly coupled levels and higher order cotunneling are discussed.
一个顶部栅控的单壁碳纳米管被用于在两个电极之间串联定义三个耦合量子点。每个量子点上的额外电子数由顶部栅极电压控制,从而能够测量单、双和三量子点稳定性图的电流。使用包含相邻量子点间隧穿耦合的电容器模型进行的模拟很好地再现了观测到的行为。此外,还讨论了间接耦合能级之间的反交叉和高阶共隧穿。