Risk W P, Rettner C T, Raoux S
IBM/Qimonda/Macronix PCRAM Joint Project, IBM Almaden Research Center, 650 Harry Rd., San Jose, California 95120, USA.
Rev Sci Instrum. 2008 Feb;79(2 Pt 1):026108. doi: 10.1063/1.2841802.
Knowledge of the thermal conductivity of phase-change materials is essential for accurate modeling of nonvolatile memory devices that incorporate them. The "3omega method" is a well-established and sensitive technique for measuring this property. We report two new extensions of the 3omega technique that feature in situ monitoring of the phase-change material as it transitions from the as-deposited amorphous phase to the crystalline phase. One technique crystallizes the entire sample in a vacuum oven, while using the 3omega voltage to monitor the phase transition. The other technique uses the 3omega heater to crystallize only the material in the region of measurement.
了解相变材料的热导率对于准确模拟包含它们的非易失性存储器件至关重要。“3ω 法”是一种成熟且灵敏的测量该特性的技术。我们报告了 3ω 技术的两个新扩展，其特点是在相变材料从沉积态非晶相转变为晶相时进行原位监测。一种技术是在真空烘箱中使整个样品结晶，同时使用 3ω 电压监测相变。另一种技术是使用 3ω 加热器仅使测量区域内的材料结晶。
