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在制造环境中清洗半导体晶圆时,工人接触甲醇蒸汽。

Worker exposure to methanol vapors during cleaning of semiconductor wafers in a manufacturing setting.

作者信息

Gaffney Shannon, Moody Emily, McKinley Meg, Knutsen Jeffrey, Madl Amy, Paustenbach Dennis

机构信息

ChemRisk, Inc., San Francisco, California 94105, USA.

出版信息

J Occup Environ Hyg. 2008 May;5(5):313-24. doi: 10.1080/15459620801988014.

Abstract

An exposure simulation was conducted to characterize methanol exposure of workers who cleaned wafers in quality control departments within the semiconductor industry. Short-term (15 min) and long-term (2-4 hr) personal and area samples (at distances of 1 m and 3-6 m from the source) were collected during the 2-day simulation. On the first day, 45 mL of methanol were used per hour by a single worker washing wafers in a 102 m(3) room with a ventilation rate of about 10 air changes per hour (ACH). Virtually all methanol volatilized. To assess exposures under conditions associated with higher productivity, on the second day, two workers cleaned wafers simultaneously, together using methanol at over twice the rate of the first day (95 mL/hr). On this day, the ventilation rate was halved (5 ACH). Personal concentrations on the first day averaged 60 ppm (SD = 46 ppm) and ranged from 10-140 ppm. On the second day, personal concentrations for both workers averaged 118 ppm (SD = 50 ppm; range: 64-270 ppm). Area concentrations measured on the first day at 1 m from the source and throughout the balance of the room averaged 29 ppm (SD = 19 ppm; range: 4-83 ppm) and 18 ppm (SD = 12 ppm; range: 3-42 ppm), respectively. As expected, area concentrations measured on the second day were higher than the first and averaged 73 ppm (SD = 25 ppm; range: 27-140 ppm) at 1 meter and 48 ppm (SD = 13 ppm; range: 21-67 ppm) throughout the balance of the room. The results of this simulation suggest that the use of methanol to clean semiconductor wafers without the use of local exhaust ventilation and with relatively low room ventilation rates is unlikely to result in worker exposures exceeding the current ACGIH(R) threshold limit value of 200 ppm. This study also confirmed prior studies suggesting that when a relatively volatile chemical is located within arm's length (near field), breathing zone concentrations will be about two- to threefold greater than the room concentration when the air exchange rate is 5-10 ACH.

摘要

进行了一次暴露模拟,以表征半导体行业质量控制部门中清洗晶圆的工人的甲醇暴露情况。在为期两天的模拟过程中,采集了短期(15分钟)和长期(2 - 4小时)的个人和区域样本(在距离源1米以及3 - 6米处)。第一天,在一个体积为102立方米、通风率约为每小时10次换气(ACH)的房间里,一名工人每小时使用45毫升甲醇清洗晶圆。几乎所有甲醇都挥发了。为了评估与更高生产率相关条件下的暴露情况,第二天,两名工人同时清洗晶圆,一起使用甲醇的速率超过第一天的两倍(95毫升/小时)。在这一天,通风率减半(5 ACH)。第一天的个人浓度平均为60 ppm(标准差 = 46 ppm),范围为10 - 140 ppm。第二天,两名工人的个人浓度平均为118 ppm(标准差 = 50 ppm;范围:64 - 270 ppm)。第一天在距离源1米处以及房间其他区域测量的区域浓度分别平均为29 ppm(标准差 = 19 ppm;范围:4 - 83 ppm)和18 ppm(标准差 = 12 ppm;范围:3 - 42 ppm)。正如预期的那样,第二天测量的区域浓度高于第一天,在1米处平均为73 ppm(标准差 = 25 ppm;范围:27 - 140 ppm),在房间其他区域平均为48 ppm(标准差 = 13 ppm;范围:21 - 67 ppm)。该模拟结果表明,在不使用局部排气通风且房间通风率相对较低的情况下,使用甲醇清洗半导体晶圆不太可能导致工人暴露超过美国政府工业卫生学家会议(ACGIH(R))当前200 ppm的阈限值。这项研究还证实了先前的研究结果,即当一种挥发性相对较高的化学品位于手臂可及范围内(近场)时,在空气交换率为5 - 10 ACH的情况下,呼吸带浓度将比房间浓度大约高两到三倍。

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