Naulleau P P, Goldberg K A, Batson P J, Jeong S, Underwood J H
Appl Opt. 2001 Aug 1;40(22):3703-9. doi: 10.1364/ao.40.003703.
The recent interest in extreme-ultraviolet (EUV) lithography has led to the development of an array of at-wavelength metrologies implemented on synchrotron beamlines. These beamlines commonly use Kirkpatrick-Baez (K-B) systems consisting of two perpendicular, elliptically bent mirrors in series. To achieve high-efficiency focusing into a small spot, unprecedented fabrication and assembly tolerance is required of these systems. Here we present a detailed error-budget analysis and develop a set of specifications for diffraction-limited performance for the K-B optic operating on the EUV interferometry beamline at Lawrence Berkeley National Laboratory's Advanced Light Source. The specifications are based on code v modeling tools developed explicitly for these optical systems. Although developed for one particular system, the alignment sensitivities presented here are relevant to K-B system designs in general.
近期对极紫外（EUV）光刻技术的关注促使人们在同步加速器光束线上开发了一系列波长级计量技术。这些光束线通常使用由两个串联的垂直椭圆弯曲镜组成的柯克帕特里克-贝兹（K-B）系统。为了实现高效聚焦到一个小光斑，这些系统需要前所未有的制造和装配公差。在这里，我们进行了详细的误差预算分析，并为劳伦斯伯克利国家实验室先进光源的EUV干涉测量光束线上运行的K-B光学元件制定了一组衍射极限性能的规范。这些规范基于专门为这些光学系统开发的代码v建模工具。尽管是为一个特定系统开发的，但这里呈现的对准灵敏度一般与K-B系统设计相关。
