Parkin Stuart S P, Hayashi Masamitsu, Thomas Luc
IBM Almaden Research Center, San Jose, CA 95120-6099, USA.
Science. 2008 Apr 11;320(5873):190-4. doi: 10.1126/science.1145799.
Recent developments in the controlled movement of domain walls in magnetic nanowires by short pulses of spin-polarized current give promise of a nonvolatile memory device with the high performance and reliability of conventional solid-state memory but at the low cost of conventional magnetic disk drive storage. The racetrack memory described in this review comprises an array of magnetic nanowires arranged horizontally or vertically on a silicon chip. Individual spintronic reading and writing nanodevices are used to modify or read a train of approximately 10 to 100 domain walls, which store a series of data bits in each nanowire. This racetrack memory is an example of the move toward innately three-dimensional microelectronic devices.
通过自旋极化电流短脉冲来控制磁性纳米线中磁畴壁的移动，这一领域的最新进展有望实现一种非易失性存储设备，它具有传统固态存储器的高性能和可靠性，但成本却与传统磁盘驱动器存储相当。本综述中描述的赛道存储器由水平或垂直排列在硅芯片上的磁性纳米线阵列组成。单个自旋电子读写纳米器件用于修改或读取一系列约10至100个磁畴壁，这些磁畴壁在每根纳米线中存储一系列数据位。这种赛道存储器是向天生的三维微电子器件发展的一个例子。
