Kim Dae-Yun, Hu Fanrui, Lee Seong-Hyub, Yang Hyunsoo, Choe Sug-Bong
Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore.
Samsung Advanced Institute of Technology, Samsung Electronics, Suwon, 16678, Republic of Korea.
Sci Rep. 2025 Apr 13;15(1):12741. doi: 10.1038/s41598-025-96871-1.
Magnetic domain walls (DWs) often exhibit creep motion, a form of collective dynamics observed in weak magnetic fields. In this study, we investigate the correlation between magnetic DW creep behavior and fundamental magnetic properties through analytical analysis and experimental demonstration. Specifically, we examined DW creep motion in a series of Pt/Co/X heterostructures, where X represents various non-magnetic layers (Ta, Ti, Ru, and Au) that are critical for inducing magnetic chirality. By systematically varying the Co layer thickness for each material X, we uncover a universal correlation between the creep scaling constant and magnetic parameters, independent of both the Co layer thickness and the choice of material X. These findings underscore the dominant role of the Pt/Co interface, rather than the Co/X interface, in governing DW creep behavior, enabling the independent tuning of both creep parameters and magnetic chirality. The present results provide clear and practical guidelines for engineering spintronic devices, facilitating advances in device performance and design.
磁畴壁（DWs）通常表现出蠕动运动，这是在弱磁场中观察到的一种集体动力学形式。在本研究中，我们通过分析分析和实验演示来研究磁畴壁蠕动行为与基本磁性能之间的相关性。具体而言，我们研究了一系列Pt/Co/X异质结构中的磁畴壁蠕动运动，其中X代表各种对诱导磁手性至关重要的非磁性层（Ta、Ti、Ru和Au）。通过系统地改变每种材料X的Co层厚度，我们发现了蠕变标度常数与磁参数之间的普遍相关性，该相关性与Co层厚度和材料X的选择均无关。这些发现强调了Pt/Co界面而非Co/X界面在控制磁畴壁蠕动行为中的主导作用，从而能够独立调节蠕变参数和磁手性。目前的结果为自旋电子器件工程提供了清晰实用的指导方针，有助于推动器件性能和设计的进步。
