Cole Jesse J, Wang Xinyu, Knuesel Robert J, Jacobs Heiko O
University of Minnesota, Electrical Engineering Room 4-178, 200 Union Street SE, Minneapolis, Minnesota 55455, USA.
Nano Lett. 2008 May;8(5):1477-81. doi: 10.1021/nl0804809. Epub 2008 Apr 12.
This article reports a new integration approach to produce arrays of ZnO microcrystals for optoelectronic and photovoltaic applications. Demonstrated applications are n-ZnO/p-GaN heterojunction LEDs and photovoltaic cells. The integration process uses an oxygen plasma treatment in combination with a photoresist pattern on magnesium doped GaN substrates to define a narrow sub-100 nm width nucleation region. Nucleation is followed by lateral epitaxial overgrowth producing single crystal disks of ZnO with desired size over 2 in. wafers. The process provides control over the dimensions (<1% STD) and the location (0.7% STD pitch variation) of the ZnO crystals. The quality of the patterned ZnO is high; the commonly observed defect related emission in the electroluminescence spectra is completely suppressed, and a single near-band-edge UV peak is observed.
本文报道了一种用于光电子和光伏应用的制备氧化锌微晶阵列的新型集成方法。展示的应用包括n型氧化锌/p型氮化镓异质结发光二极管和光伏电池。该集成工艺采用氧等离子体处理，并结合在掺镁氮化镓衬底上的光刻胶图案，以定义一个宽度小于100纳米的狭窄成核区域。成核之后是横向外延过生长，在2英寸以上的晶圆上产生具有所需尺寸的氧化锌单晶盘。该工艺可控制氧化锌晶体的尺寸（标准偏差<1%）和位置（间距变化标准偏差0.7%）。图案化氧化锌的质量很高；电致发光光谱中常见的与缺陷相关的发射被完全抑制，并且观察到一个单一的近带边紫外峰。
