Tiagulskyi Stanislav, Yatskiv Roman, Faitová Hana, Kučerová Šárka, Roesel David, Vaniš Jan, Grym Jan, Veselý Jozef
Institute of Photonics and Electronics of the Czech Academy of Sciences, Chaberska 57, 18251 Prague 8, Czech Republic.
Faculty of Mathematics and Physics, Charles University, Ke Karlovu 3, 12116 Prague 2, Czech Republic.
Nanomaterials (Basel). 2020 Mar 11;10(3):508. doi: 10.3390/nano10030508.
We study the effect of thermal annealing on the electrical properties of the nanoscale - heterojunctions based on single -type ZnO nanorods on -type GaN substrates. The ZnO nanorods are prepared by chemical bath deposition on both plain GaN substrates and on the substrates locally patterned by focused ion beam lithography. Electrical properties of single nanorod heterojunctions are measured with a nanoprobe in the vacuum chamber of a scanning electron microscope. The focused ion beam lithography provides a uniform nucleation of ZnO, which results in a uniform growth of ZnO nanorods. The specific configuration of the interface between the ZnO nanorods and GaN substrate created by the focused ion beam suppresses the surface leakage current and improves the current-voltage characteristics. Further improvement of the electrical characteristics is achieved by annealing of the structures in nitrogen, which limits the defect-mediated leakage current and increases the carrier injection efficiency.
我们研究了热退火对基于在n型GaN衬底上的单型ZnO纳米棒的纳米级异质结电学性质的影响。通过化学浴沉积在普通GaN衬底以及通过聚焦离子束光刻局部图案化的衬底上制备ZnO纳米棒。在扫描电子显微镜的真空室中用纳米探针测量单个纳米棒异质结的电学性质。聚焦离子束光刻提供了ZnO的均匀成核，这导致了ZnO纳米棒的均匀生长。由聚焦离子束产生的ZnO纳米棒与GaN衬底之间界面的特定构型抑制了表面漏电流并改善了电流-电压特性。通过在氮气中对结构进行退火实现了电学特性的进一步改善，这限制了缺陷介导的漏电流并提高了载流子注入效率。
