Liu Liping, Peng Qing, Li Yadong
Department of Chemistry, Tsinghua University, Beijing 100084, P.R. China.
Inorg Chem. 2008 Jun 2;47(11):5022-8. doi: 10.1021/ic800368u. Epub 2008 May 1.
High quality CdSe quantum dots are synthesized through a room temperature injection technique by using CdAc2 and Na2SeSO3 as precursors. In this synthesis approach, small CdSe clusters are formed after the injection at room temperature. Thereafter, CdSe quantum dots with emissions from the green to the red region can be obtained by transferring these clusters to different temperatures (40-150 degrees C) for particle growth. Meanwhile, CdSe quantum dots with emission in the blue-violet region (500-430 nm) are gained by an oxidation etching approach using H2O2 as oxidant. The advantage of this method is the natural separation of the nucleation and the growth process, which can provide a longer time for the preparation of the nuclei in simple operations and a well controlled fluorescence of the products, as the evolution of the fluorescence is slow at this low particle growth temperature.
通过室温注入技术，以醋酸镉（CdAc2）和亚硒酸钠（Na2SeSO3）作为前驱体，合成了高质量的硒化镉（CdSe）量子点。在这种合成方法中，室温注入后形成了小的CdSe团簇。此后，通过将这些团簇转移到不同温度（40 - 150摄氏度）进行颗粒生长，可以获得发射从绿色到红色区域的CdSe量子点。同时，使用过氧化氢（H2O2）作为氧化剂，通过氧化蚀刻方法获得了发射在蓝紫色区域（500 - 430纳米）的CdSe量子点。该方法的优点是成核和生长过程自然分离，在简单操作中可以为核的制备提供更长时间，并且由于在这种低颗粒生长温度下荧光的演变缓慢，产物的荧光得到良好控制。
