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Ge15Sb20S65和Te20As30Se50的硫族化物涂层

Chalcogenide coatings of Ge15Sb20S65 and Te20As30Se50.

作者信息

Nazabal Virginie, Cathelinaud Michel, Shen Weidong, Nemec Petr, Charpentier Frédéric, Lhermite Hervé, Anne Marie-Laure, Capoulade Jérémie, Grasset Fabien, Moreac Alain, Inoue Satoru, Frumar Miloslav, Adam Jean-Luc, Lequime Michel, Amra Claude

机构信息

Sciences Chimiques de Rennes, UMR 6226, Université Rennes 1, 35042 Rennes, France.

出版信息

Appl Opt. 2008 May 1;47(13):C114-23. doi: 10.1364/ao.47.00c114.

Abstract

Chalcogenide coatings are investigated to obtain either optical components for spectral applications or optochemical sensors in the mid-infrared. The deposition of Ge(15)Sb(20)S(65) and Te(20)As(30)Se(50) chalcogenide glasses is performed by two physical techniques: electron-beam and pulsed-laser deposition. The quality of the film is analyzed by scanning electron microscopy, atomic force microscopy, and energy dispersive spectroscopy to characterize the morphology, topography, and chemical composition. The optical properties and optical constants are also determined. A CF(4) dry etching is performed on these films to obtain a channeled optical waveguide. For a passband filter made by electron-beam deposition, cryolite as a low-refractive-index material and chalcogenide glasses as high-refractive-index materials are used to favor a large refractive-index contrast. A shift of a centered wavelength of a photosensitive passband filter is controlled by illumination time.

摘要

对硫族化物涂层进行了研究,以获得用于光谱应用的光学元件或中红外光化学传感器。通过两种物理技术沉积Ge(15)Sb(20)S(65)和Te(20)As(30)Se(50)硫族化物玻璃:电子束沉积和脉冲激光沉积。通过扫描电子显微镜、原子力显微镜和能量色散光谱分析薄膜质量,以表征其形态、形貌和化学成分。还测定了光学性质和光学常数。对这些薄膜进行CF(4)干法蚀刻以获得沟道光波导。对于通过电子束沉积制成的通带滤波器,使用冰晶石作为低折射率材料,硫族化物玻璃作为高折射率材料,以形成较大的折射率对比度。通过光照时间控制光敏通带滤波器中心波长的偏移。

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