Zimmler Mariano A, Stichtenoth Daniel, Ronning Carsten, Yi Wei, Narayanamurti Venkatesh, Voss Tobias, Capasso Federico
School of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138, USA.
Nano Lett. 2008 Jun;8(6):1695-9. doi: 10.1021/nl080627w. Epub 2008 May 8.
We present a method which can be used for the mass-fabrication of nanowire photonic and electronic devices based on spin-on glass technology and on the photolithographic definition of independent electrical contacts to the top and the bottom of a nanowire. This method allows for the fabrication of nanowire devices in a reliable, fast, and low cost way, and it can be applied to nanowires with arbitrary cross section and doping type (p and n). We demonstrate this technique by fabricating single-nanowire p-Si(substrate)-n-ZnO(nanowire) heterojunction diodes, which show good rectification properties and, furthermore, which function as ultraviolet light-emitting diodes.
我们提出了一种方法，该方法可用于基于旋涂玻璃技术以及对纳米线顶部和底部独立电接触进行光刻定义来大规模制造纳米线光子和电子器件。这种方法能够以可靠、快速且低成本的方式制造纳米线器件，并且它可以应用于具有任意横截面和掺杂类型（p型和n型）的纳米线。我们通过制造单纳米线p - Si（衬底）- n - ZnO（纳米线）异质结二极管来演示该技术，这些二极管显示出良好的整流特性，此外，还能用作紫外发光二极管。
