Hsin C L, He J H, Lee C Y, Wu W W, Yeh P H, Chen L J, Wang Z L
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China.
Nano Lett. 2007 Jun;7(6):1799-803. doi: 10.1021/nl0707914. Epub 2007 May 22.
Lateral orientated growth of In2O3 nanowire (NW) and nanorod (NR) arrays has been achieved by a vapor transport and condensation method on (001) and (111) surfaces of Si substrates. The single crystalline In2O3 NWs and NRs were grown along [211] in parallel to the Si +/-[110] and lying in the substrate plane. The electrical measurements show that the In2O3 NWs are p-type semiconductor. By N+ doping, the resistivity of the In2O3 NWs has been tuned. The lateral self-aligned In2O3 NW and NR arrays on Si can offer some unique advantages for fabricating parallel nanodevices that can be integrated directly with silicon technology.
通过气相传输和冷凝法，在硅衬底的(001)和(111)表面实现了In2O3纳米线（NW）和纳米棒（NR）阵列的横向取向生长。单晶In2O3 NW和NR沿[211]方向生长，与硅的±[110]平行且位于衬底平面内。电学测量表明In2O3 NW是p型半导体。通过N+掺杂，对In2O3 NW的电阻率进行了调节。硅上横向自对准的In2O3 NW和NR阵列可为制造可直接与硅技术集成的平行纳米器件提供一些独特优势。
