Mishra Nirankar N, Maki Wusi C, Cameron Eric, Nelson Ron, Winterrowd Paul, Rastogi Shiva K, Filanoski Brian, Maki Gary K
Center for Advanced Microelectronics and Biomolecular Research, University of Idaho, Post Falls, ID 83854, USA.
Lab Chip. 2008 Jun;8(6):868-71. doi: 10.1039/b802036a. Epub 2008 Apr 29.
Nanowire field effect transistors (nano-FET) were lithographically fabricated using 50 nm doped polysilicon nanowires attached to two small gold terminals separated from each other by a approximately 150 nm gap to serve as the basis for electronic detection of bacteria toxins. The device characterizations, semiconducting properties and use in a robust and sensitive bio-molecular detection sensor of bacterial toxins were reported in this work. The device characteristics were demonstrated with varying gate and drain voltages. The bio-molecular detection was demonstrated using electrochemical impedance spectroscopy (EIS), using Staphylococcus aureus Enterotoxin B (SEB) as the target molecule. The detection limit of SEB was observed in the range of 10-35 fM.
纳米线场效应晶体管（nano-FET）是通过光刻技术制造的，使用50纳米的掺杂多晶硅纳米线连接到两个小的金电极上，两个电极之间有大约150纳米的间隙，以此作为细菌毒素电子检测的基础。这项工作报道了该器件的表征、半导体特性以及在细菌毒素的稳健且灵敏的生物分子检测传感器中的应用。通过改变栅极和漏极电压展示了器件特性。使用电化学阻抗谱（EIS），以金黄色葡萄球菌肠毒素B（SEB）作为目标分子进行了生物分子检测。观察到SEB的检测限在10 - 35飞摩尔范围内。
