Piqueras J, Maestre D, Ortega Y, Cremades A, Fernández P
Departamento de Física de Materiales, Facultad de Ciencias Físicas, Universidad Complutense de Madrid, 28040 Madrid, Spain.
Scanning. 2008 Jul-Aug;30(4):354-7. doi: 10.1002/sca.20105.
Nano- and microstructures of SnO(2), In(2)O(3) and ZnO have been grown during thermal treatment of compacted powders under argon flow. Indium-doped SnO(2) tube-shaped structures with rectangular cross-section are obtained by adding a fraction of In(2)O(3) to the starting SnO(2) powder. In-rich nanoislands were found to grow on some edges of the tubes. ZnO nanostructures doped with Sn or Eu were grown by adding SnO(2) and Eu(2)O(3) powder, respectively, to the ZnO precursor powder. All the samples have been characterized by the emissive and cathodoluminescence (CL) modes of scanning electron microscopy. CL images from SnO(2):In and In(2)O(3):Sn tubes and islands show a higher emission from the Sn-rich structures related to oxygen deficiency. CL of doped ZnO enables to detect the presence of dopant in specific regions or structures. CL appears to be a useful technique to study optical and electronic properties of semiconductor oxide nanostructures.
在氩气流下对压实粉末进行热处理的过程中，生长出了SnO₂、In₂O₃和ZnO的纳米及微观结构。通过向起始的SnO₂粉末中添加一部分In₂O₃，获得了具有矩形横截面的铟掺杂SnO₂管状结构。发现在管子的一些边缘上生长出了富铟纳米岛。分别通过向ZnO前驱体粉末中添加SnO₂和Eu₂O₃粉末，生长出了掺杂Sn或Eu的ZnO纳米结构。所有样品均通过扫描电子显微镜的发射和阴极发光（CL）模式进行了表征。来自SnO₂:In和In₂O₃:Sn管及岛的CL图像显示，富Sn结构因氧缺陷而发射出更高的光。掺杂ZnO的CL能够检测特定区域或结构中掺杂剂的存在。CL似乎是研究半导体氧化物纳米结构光学和电子性质的一种有用技术。
