Departments of Electrical Engineering, National University of Tainan, Tainan, 700, Taiwan.
Small. 2014 Nov;10(22):4562-85. doi: 10.1002/smll.201401580. Epub 2014 Oct 15.
In the past decades, the doping of ZnO one-dimensional nanostructures has attracted a great deal of attention due to the variety of possible morphologies, large surface-to-volume ratios, simple and low cost processing, and excellent physical properties for fabricating high-performance electronic, magnetic, and optoelectronic devices. This article mainly concentrates on recent advances regarding the doping of ZnO one-dimensional nanostructures, including a brief overview of the vapor phase transport method and hydrothermal method, as well as the fabrication process for photodetectors. The dopant elements include B, Al, Ga, In, N, P, As, Sb, Ag, Cu, Ti, Na, K, Li, La, C, F, Cl, H, Mg, Mn, S, and Sn. The various dopants which act as acceptors or donors to realize either p-type or n-type are discussed. Doping to alter optical properties is also considered. Lastly, the perspectives and future research outlook of doped ZnO nanostructures are summarized.
在过去的几十年中，由于 ZnO 一维纳米结构具有多种可能的形态、较大的比表面积-体积比、简单且低成本的处理工艺以及用于制造高性能电子、磁性和光电设备的优异物理性能，因此其掺杂吸引了大量关注。本文主要集中于 ZnO 一维纳米结构掺杂的最新进展，包括简要概述气相输运法和水热法，以及光探测器的制造工艺。掺杂元素包括 B、Al、Ga、In、N、P、As、Sb、Ag、Cu、Ti、Na、K、Li、La、C、F、Cl、H、Mg、Mn、S 和 Sn。讨论了各种掺杂剂作为受主或施主来实现 p 型或 n 型，以改变光学性质。最后，总结了掺杂 ZnO 纳米结构的观点和未来研究展望。
