Chien Heng-Chieh, Yao Da-Jeng, Huang Mei-Jiau, Chang Tien-Yao
Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Hsin-chu, 31040 Taiwan, Republic of China.
Rev Sci Instrum. 2008 May;79(5):054902. doi: 10.1063/1.2927253.
In this paper, we describe an easy-to-use method to measure the thermal conductivity of thin films based on an electrical heating/sensing mechanism and a steady-state technique. The method used relative commonly used instruments, and without any signal processing circuit, is easy to be used in such thin-film thermal conductivity measurement. The SiO2 thin-film samples, prepared by thermal oxidation, plasma enhanced chemical vapor deposition (PECVD), and E-beam evaporator, were deposited on a silicon substrate. The apparent thermal conductivity, the intrinsic thermal conductivity of SiO2 films, and the total interface thermal resistance of the heater/SiO2/silicon system were evaluated. Our data showed agreement with those data obtained from previous literatures and from the 3 omega method. Furthermore, by using a sandwiched structure, the interface thermal resistance of Cr/PECVD SiO2 and PECVD SiO2/silicon were also separately evaluated in this work. The data showed that the interface thermal resistance of Cr/PECVD SiO2 (metal/dielectric) is about one order of magnitude larger than that of PECVD SiO2/silicon (dielectric/dielectric).
在本文中，我们描述了一种基于电加热/传感机制和稳态技术来测量薄膜热导率的简便方法。该方法使用相对常用的仪器，且无需任何信号处理电路，易于用于此类薄膜热导率测量。通过热氧化、等离子体增强化学气相沉积（PECVD）和电子束蒸发制备的SiO₂薄膜样品沉积在硅衬底上。评估了表观热导率、SiO₂薄膜的本征热导率以及加热器/SiO₂/硅系统的总界面热阻。我们的数据与先前文献以及3ω法获得的数据一致。此外，通过使用夹层结构，在这项工作中还分别评估了Cr/PECVD SiO₂和PECVD SiO₂/硅的界面热阻。数据表明，Cr/PECVD SiO₂（金属/电介质）的界面热阻比PECVD SiO₂/硅（电介质/电介质）的界面热阻大约大一个数量级。
