Choi Won Hoon, Kang Pil Gyu, Ryang Kyung Deuk, Yeom Han Woong
Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Korea.
Phys Rev Lett. 2008 Mar 28;100(12):126801. doi: 10.1103/PhysRevLett.100.126801. Epub 2008 Mar 24.
We report on the systematic tuning of the electronic band structure of atomic wires by controlling the density of impurity atoms. The atomic wires are self-assembled on Si(111) by substitutional gold adsorbates and extra silicon atoms are deposited as the impurity dopants. The one-dimensional electronic band of gold atomic wires, measured by angle-resolved photoemission, changes from a fully metallic to semiconducting one with its band gap increasing above 0.3 eV along with an energy shift as a linear function of the Si dopant density. The gap opening mechanism is suggested to be related to the ordering of the impurities.
我们报道了通过控制杂质原子密度对原子线电子能带结构进行的系统调控。原子线通过替代金吸附物在Si(111)上自组装而成，额外的硅原子作为杂质掺杂剂沉积。通过角分辨光电子能谱测量的金原子线的一维电子能带，从完全金属性转变为半导体性，其带隙增加到0.3 eV以上，同时能量发生位移，该位移是硅掺杂剂密度的线性函数。带隙打开机制被认为与杂质的有序排列有关。
