Chang H J, Chen T T, Huang L L, Chen Y F, Tsai J Y, Wang T C, Kuo H C
Department of Physics, National Taiwan University, Taipei 106, Taiwan.
Opt Express. 2008 Jan 21;16(2):920-6. doi: 10.1364/oe.16.000920.
Optically modulated internal strain has been observed in InGaN quantum dots (QDs) deposited on SiN(x) nano masks. The modulated internal strain can induce a number of intriguing effects, including the change of refractive index and the redshift of InGaN A(1)(LO) phonon. The underlying mechanism can be well accounted for in terms of the variation of internal strain through the converse piezoelectric effect arising from the screening of the internal electric field due to spatial separation of photoexcited electrons and holes. Our results point out a convenient way for the fine tuning of physical properties in nitride-based semiconductor nanostructures, which is very important for high quality optoelectronic devices.
在沉积于SiN(x)纳米掩膜上的InGaN量子点（QD）中观测到了光调制内应变。这种调制内应变可引发许多有趣的效应，包括折射率的变化以及InGaN A(1)(LO)声子的红移。其潜在机制可以通过光激发电子和空穴的空间分离对内电场进行屏蔽所产生的逆压电效应，依据内应变的变化得到很好的解释。我们的结果指出了一种用于精细调节氮化物基半导体纳米结构物理性质的便捷方法，这对于高质量光电器件而言非常重要。
