Xue J J, Chen D J, Liu B, Lu H, Zhang R, Zheng Y D, Cui B, Wowchak Andrew M, Dabiran Amir M, Xu K, Zhang J P
Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing National Laboratory of Microstructure, School of Electronics Science and Engineering, Nanjing University, Nanjing 210093, China.
Opt Express. 2012 Mar 26;20(7):8093-9. doi: 10.1364/OE.20.008093.
Indium-rich InGaN epitaxial layers with a p-i-n structure were grown pseudomorphically on a strain-relaxed InGaN template to reduce structural strain induced by lattice mismatch. We applied a nano-sculpting process to improve the crystal quality of the strain-relaxed InGaN template. The results show that the nano-sculpting process can suppress effectively the threading dislocation generation and improves significantly the I-V characteristic of the InGaN p-i-n structure. This InGaN template technique with nano-sculpting process shows great potential for future applications in indium-rich InGaN optic-electron devices.
具有p-i-n结构的富铟氮化铟镓外延层在应变弛豫的氮化铟镓模板上赝晶生长，以减少由晶格失配引起的结构应变。我们应用了一种纳米雕刻工艺来提高应变弛豫氮化铟镓模板的晶体质量。结果表明，纳米雕刻工艺可以有效抑制位错的产生，并显著改善氮化铟镓p-i-n结构的I-V特性。这种采用纳米雕刻工艺的氮化铟镓模板技术在未来富铟氮化铟镓光电器件的应用中显示出巨大潜力。
