Alves Helena, Molinari Anna S, Xie Hangxing, Morpurgo Alberto F
Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands.
Nat Mater. 2008 Jul;7(7):574-80. doi: 10.1038/nmat2205. Epub 2008 Jun 15.
The electronic properties of interfaces between two different solids can differ strikingly from those of the constituent materials. For instance, metallic conductivity-and even superconductivity-have recently been discovered at interfaces formed by insulating transition-metal oxides. Here, we investigate interfaces between crystals of conjugated organic molecules, which are large-gap undoped semiconductors, that is, essentially insulators. We find that highly conducting interfaces can be realized with resistivity ranging from 1 to 30 kohms per square, and that, for the best samples, the temperature dependence of the conductivity is metallic. The observed electrical conduction originates from a large transfer of charge between the two crystals that takes place at the interface, on a molecular scale. As the interface assembly process is simple and can be applied to crystals of virtually any conjugated molecule, the conducting interfaces described here represent the first examples of a new class of electronic systems.
两种不同固体之间界面的电子特性可能与组成材料的电子特性显著不同。例如,最近在由绝缘过渡金属氧化物形成的界面上发现了金属导电性——甚至超导性。在这里,我们研究共轭有机分子晶体之间的界面,共轭有机分子是大带隙未掺杂半导体,即本质上是绝缘体。我们发现,可以实现具有每平方1至30千欧电阻率的高导电界面,并且对于最佳样品,电导率的温度依赖性是金属性的。观察到的导电源于在界面处分子尺度上两个晶体之间发生的大量电荷转移。由于界面组装过程简单且可应用于几乎任何共轭分子的晶体,这里描述的导电界面代表了一类新型电子系统的首个实例。