Ham Sunyoung, Jeon Soyeon, Lee Ungki, Park Minsoon, Paeng Ki-Jung, Myung Noseung, Rajeshwar Krishnan
Department of Chemistry, Yonsei University, Wonju Campus, Wonju, Kangwondo 220-710, Korea.
Anal Chem. 2008 Sep 1;80(17):6724-30. doi: 10.1021/ac8008127. Epub 2008 Aug 2.
Bismuth telluride (Bi 2Te 3 ) is a benchmark material for thermoelectric power generation and cooling applications. Electrodeposition is a versatile technique for preparing thin films of this material; however, it affords films of variable composition depending on the preparation history. A simple and rapid assay of electrodeposited films, therefore, has both fundamental and practical importance. In this study, a new protocol for the electroanalysis of Bi 2Te 3 thin films is presented by combining the two powerful and complementary techniques of electrochemical quartz crystal microgravimetry (EQCM) and stripping voltammetry. First, any free (and excess) tellurium in the electrodeposited film was reduced to soluble Te ( 2- ) species by scanning to negative potentials in a 0.1 M Na 2SO 4 electrolyte, and the accompanying frequency increase (mass loss) was used to determine the content of free tellurium. The film was again subjected to cathodic stripping in the same medium (to generate Bi (0) and soluble Te (2-) from the Bi 2 Te 3 film component of interest), and the EQCM frequency change was used to determine the content of chemically bound Te in the Bi 2Te 3 thin film and thereby the compound stoichiometry. Finally, the EQCM frequency change during Bi oxidation to Bi (3+) and the difference between total Bi and Bi in Bi 2Te 3 resulted in the assay of free (excess) Bi in the electrodeposited film. Problems associated with the chemical/electrochemical stability of the free Bi species were circumvented by a flow electroanalysis approach. Data are also presented on the sensitivity of electrodeposited Bi 2Te 3 film composition to the electrodeposition potential. This newly developed method can be used for the compositional analysis of other thermoelectric thin-film material candidates in general.
碲化铋(Bi₂Te₃)是用于热电发电和冷却应用的基准材料。电沉积是制备这种材料薄膜的一种通用技术;然而,根据制备过程的不同,它所提供的薄膜成分会有所变化。因此,对电沉积薄膜进行简单快速的分析具有重要的基础意义和实际意义。在本研究中,通过结合电化学石英晶体微天平(EQCM)和溶出伏安法这两种强大且互补的技术,提出了一种用于Bi₂Te₃薄膜电分析的新方案。首先,在0.1 M Na₂SO₄电解质中扫描至负电位,将电沉积薄膜中任何游离(和过量)的碲还原为可溶性的Te(2-)物种,伴随的频率增加(质量损失)用于确定游离碲的含量。该薄膜再次在相同介质中进行阴极溶出(从感兴趣的Bi₂Te₃薄膜成分中生成Bi(0)和可溶性Te(2-)),EQCM频率变化用于确定Bi₂Te₃薄膜中化学结合碲的含量,从而确定化合物的化学计量比。最后,Bi氧化为Bi(3+)过程中的EQCM频率变化以及Bi₂Te₃中总Bi与Bi的差值,可用于测定电沉积薄膜中游离(过量)Bi的含量。通过流动电分析方法规避了与游离Bi物种的化学/电化学稳定性相关的问题。还给出了电沉积Bi₂Te₃薄膜成分对电沉积电位的敏感性数据。这种新开发的方法一般可用于其他热电薄膜材料候选物的成分分析。