Park Jungjoon, Seo Jinmyeong, Lim Jae-Hong, Yoo Bongyoung
Department of Materials Science and Chemical Engineering, Hanyang University, Ansan, South Korea.
Department of Materials Science and Engineering, Gachon University, Seongnam, South Korea.
Front Chem. 2022 Jan 21;10:799305. doi: 10.3389/fchem.2022.799305. eCollection 2022.
Intermetallic copper telluride thin films, which are important in a number of electronics fields, were electrodeposited using a potentiostatic method in low-pH aqueous electrolyte baths with various ion-source concentrations, and the electrical properties of the formed films were investigated after exfoliation from the substrate. The films were electrochemically analyzed by cyclic voltammetry, while surface and cross-sectional morphologies, compositional ratios, and electrical properties were analyzed by scanning electron microscopy, X-ray diffractometry, X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, and Hall-effect experiments. The copper telluride thin films, which were synthesized at various potentials in each bath, exhibit different composition ratios and structures; consequently, they show a variety of electrical and thermoelectric properties, including different electrical conductivities, carrier concentrations, mobilities, and Seebeck coefficients. Among them, the thin film with a 1:1 Cu:Te ratio delivered the highest power factor due to carrier filtering at the interface between the two phases.
金属间碲化铜薄膜在许多电子领域都很重要，采用恒电位法在具有不同离子源浓度的低pH值水性电解质浴中进行电沉积，并在从基板上剥离后研究形成薄膜的电学性能。通过循环伏安法对薄膜进行电化学分析，同时通过扫描电子显微镜、X射线衍射、X射线光电子能谱、紫外光电子能谱和霍尔效应实验分析表面和横截面形态、成分比和电学性能。在每个浴中不同电位下合成的碲化铜薄膜表现出不同的成分比和结构；因此，它们表现出各种电学和热电性能，包括不同的电导率、载流子浓度、迁移率和塞贝克系数。其中，Cu:Te比例为1:1的薄膜由于在两相界面处的载流子过滤而具有最高的功率因数。
