Liu X M, Romero H E, Gutierrez H R, Adu K, Eklund P C
Department of Physics, The Pennsylvania, State University, University Park, Pennsylvania 16802, USA.
Nano Lett. 2008 Sep;8(9):2613-9. doi: 10.1021/nl0729734. Epub 2008 Aug 2.
We report results of studies on the sheet resistance and optical transmission of thin films of boron-doped single-walled carbon nanotubes (SWNTs). Boron doping was carried out by exposure of SWNTs to B 2O 3 and NH 3 at 900 degrees C and 1-3 atom % boron was found in the SWNT bundles via electron energy loss spectroscopy (EELS). Boron doping was found to downshift the positions of the optical absorption bands associated with the van Hove singularities (E 11 (s) E 22 (s) and E 11 (m)) by approximately 30 meV relative to their positions in acid-treated and annealed SWNTs. Raman spectroscopy, EELS, and optical data are consistent with the picture that a few atom % boron has been substituted for carbon in the sp (2) framework of SWNTs. Finally, our results show that boron doping does not significantly affect the optical transmittance in the visible region. However, boron doping lowers the sheet resistance by approximately 30% relative to pristine SWNT films from the same batch. Boron-doped SWNT may provide a better approach to touch-screen technology.
我们报告了关于硼掺杂单壁碳纳米管（SWNTs）薄膜的薄层电阻和光学透射率的研究结果。通过在900℃下将SWNTs暴露于B₂O₃和NH₃进行硼掺杂，通过电子能量损失谱（EELS）在SWNT管束中发现了1 - 3原子百分比的硼。相对于酸处理和退火后的SWNTs中与范霍夫奇点（E₁₁(s)、E₂₂(s)和E₁₁(m)）相关的光吸收带位置，发现硼掺杂使其下移了约30 meV。拉曼光谱、EELS和光学数据与在SWNTs的sp(2)框架中几个原子百分比的硼取代了碳的情况相符。最后，我们的结果表明硼掺杂不会显著影响可见光区域的光学透射率。然而，相对于同一批次的原始SWNT薄膜，硼掺杂使薄层电阻降低了约30%。硼掺杂的SWNT可能为触摸屏技术提供一种更好的方法。
