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绝缘体上硅(SOI)中的超高品质因子一维光子晶体/光子线微腔

Ultra high quality factor one dimensional photonic crystal/photonic wire micro-cavities in silicon-on-insulator (SOI).

作者信息

Zain Ahmad R, Johnson Nigel P, Sorel Marc, De La Rue Richard M

机构信息

Optoelectronics Research Groups, Department of Electronics and Electrical Engineering, University of Glasgow,Rankine Building, Oakfield Avenue, Glasgow G128LT, United Kingdom.

出版信息

Opt Express. 2008 Aug 4;16(16):12084-9. doi: 10.1364/oe.16.012084.

Abstract

We present experimental results on photonic crystal/photonic wire micro-cavity structures that demonstrate further enhancement of the quality-factor (Q-factor)--up to approximately 149,000--in the fibre telecommunications wavelength range. The Q-values and the useful transmission levels achieved are due, in particular, to the combination of both tapering within and outside the micro-cavity, with carefully designed hole diameters and non-periodic hole placement within the tapered section. Our 2D Finite Difference Time Domain (FDTD) simulation approach shows good agreement with the experimental results.

摘要

我们展示了光子晶体/光子线微腔结构的实验结果,这些结果表明,在光纤通信波长范围内,品质因数(Q值)进一步提高,达到了约149,000。所实现的Q值和有用传输水平尤其归因于微腔内外部的渐变与精心设计的孔径以及渐变段内非周期性的孔布局相结合。我们的二维时域有限差分(FDTD)模拟方法与实验结果显示出良好的一致性。

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