Aguilera L, Lanza M, Porti M, Grifoll J, Nafría M, Aymerich X
Dept. Enginyeria Electronica, Universitat Autonoma de Barcelona, 08193 Bellaterra, Spain.
Rev Sci Instrum. 2008 Jul;79(7):073701. doi: 10.1063/1.2952058.
A new configuration of conductive atomic force microscope (CAFM) is presented, which is based in a standard CAFM where the typical I-V converter has been replaced by a log I-V amplifier. This substitution extends the current dynamic range from 1-100 pA to 1 pA-1 mA. With the broadening of the current dynamic range, the CAFM can access new applications, such as the reliability evaluation of metal-oxide-semiconductor gate dielectrics. As an example, the setup has been tested by analyzing breakdown spots induced in SiO2 layers.
本文介绍了一种导电原子力显微镜（CAFM）的新配置，它基于标准的CAFM，其中典型的I-V转换器已被对数I-V放大器取代。这种替换将电流动态范围从1-100 pA扩展到1 pA-1 mA。随着电流动态范围的拓宽，CAFM可以应用于新的领域，如金属氧化物半导体栅极电介质的可靠性评估。例如，通过分析SiO2层中诱导的击穿点对该装置进行了测试。
