Wasa K, Tohda T, Kasahara Y, Hayakawa S
Materials Research Laboratory, Matsushita Electric Industrial Co., Ltd., Moriguchi, Osaka, Japan.
Rev Sci Instrum. 1979 Sep;50(9):1084-8. doi: 10.1063/1.1135988.
A SiC thin-film thermistor for high-temperature use has been developed by using rf-sputtered SiC thin films. This thermistor can be used for industrial and consumer use within an operating temperature range of -100 to 450 degrees C. By using SiC thin films, the thermistor maintains high electrical stability. The resistance change is less than 3% after exposure to heat at 400 degrees C for 2000 h. In addition, the film growth technique made possible the production of a high-accuracy thermistor, i.e., thermistor coefficient < +/-0.5%, thermistor resistance < +/-1.5%.
通过使用射频溅射碳化硅薄膜，已开发出一种用于高温的碳化硅薄膜热敏电阻。该热敏电阻可在-100至450摄氏度的工作温度范围内用于工业和消费领域。通过使用碳化硅薄膜，热敏电阻保持了高电气稳定性。在400摄氏度下加热2000小时后，电阻变化小于3%。此外，薄膜生长技术使得生产高精度热敏电阻成为可能，即热敏电阻系数<±0.5%，热敏电阻电阻<±1.5%。
