Perebeinos Vasili, Avouris Phaedon
IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598, USA.
Phys Rev Lett. 2008 Aug 1;101(5):057401. doi: 10.1103/PhysRevLett.101.057401. Epub 2008 Jul 30.
We investigate theoretically the rates of nonradiative decay of excited semiconducting nanotubes by a variety of decay mechanisms and compare them with experimental findings. We find that the multiphonon decay (MPD) of free excitons is too slow to be responsible for the experimentally observed lifetimes. However, MPD lifetimes of localized excitons could be 2-3 orders of magnitude shorter. We also propose a new decay mechanism that relies on a finite doping of nanotubes and involves exciton decay into an optical phonon and an intraband electron-hole pair. The resulting lifetime is in the range of 5 to 100 ps, even for a moderate doping level.
我们从理论上研究了多种衰变机制下半导体纳米管激发态的非辐射衰变率,并将其与实验结果进行了比较。我们发现自由激子的多声子衰变(MPD)速度太慢,无法解释实验观测到的寿命。然而,局域激子的MPD寿命可能会短2至3个数量级。我们还提出了一种新的衰变机制,该机制依赖于纳米管的有限掺杂,涉及激子衰变为一个光学声子和一个带内电子 - 空穴对。即使在适度掺杂水平下,由此产生的寿命也在5到100皮秒范围内。