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浅掺杂碳纳米管中的多粒子激子电离

Multiparticle Exciton Ionization in Shallow Doped Carbon Nanotubes.

作者信息

Sau Jay D, Crochet Jared J, Doorn Stephen K, Cohen Marvin L

机构信息

†Department of Physics, Harvard University, Cambridge, Massachusetts, United States.

§Department of Physics, University of California at Berkeley, Berkeley, California, United States.

出版信息

J Phys Chem Lett. 2013 Mar 21;4(6):982-6. doi: 10.1021/jz400049c. Epub 2013 Mar 11.

Abstract

Shallow hole doping in small-diameter semiconducting carbon nanotubes with a valley degeneracy is predicted to result in the resonant ionization of excitons into free electron-hole pairs. This mechanism, which relies on the chirality of the electronic states, causes excitons to decay with high efficiencies where the rate scales as the square of the dopant density. Moreover, multiparticle exciton ionization can account for delocalized fluorescence quenching when a few holes per micrometer of tube length are present.

摘要

据预测,在具有谷简并性的小直径半导体碳纳米管中进行浅孔掺杂会导致激子共振电离成自由电子 - 空穴对。这种依赖于电子态手性的机制,使得激子能够高效衰减,其速率与掺杂剂密度的平方成正比。此外,当每微米管长存在几个空穴时,多粒子激子电离可以解释离域荧光猝灭现象。

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