Talin A Alec, Léonard François, Swartzentruber B S, Wang Xin, Hersee Stephen D
Sandia National Laboratories, Livermore, California 94551, USA.
Phys Rev Lett. 2008 Aug 15;101(7):076802. doi: 10.1103/PhysRevLett.101.076802.
The current-voltage characteristics of thin wires are often observed to be nonlinear, and this behavior has been ascribed to Schottky barriers at the contacts. We present electronic transport measurements on GaN nanorods and demonstrate that the nonlinear behavior originates instead from space-charge-limited current. A theory of space-charge-limited current in thin wires corroborates the experiments and shows that poor screening in high-aspect ratio materials leads to a dramatic enhancement of space-charge limited current, resulting in new scaling in terms of the aspect ratio.
细导线的电流-电压特性通常表现为非线性，这种行为被归因于接触处的肖特基势垒。我们展示了对氮化镓纳米棒的电子输运测量，并证明非线性行为实际上源于空间电荷限制电流。细导线中空间电荷限制电流的理论证实了这些实验，并表明高纵横比材料中屏蔽效果不佳会导致空间电荷限制电流显著增强，从而在纵横比方面产生新的标度关系。
