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单个氧化锌纳米棒的图案化制备及其光电特性测量。

Patterned fabrication of single ZnO nanorods and measurement of their optoelectrical characteristics.

作者信息

Yu Chun-Wei, Lai Shang-Hung, Wang Teng-Yi, Lan Ming-Der, Ho Mon-Shu

机构信息

Department of Physics, National Chung Hsing University, Taichung 40249, Taiwan.

出版信息

J Nanosci Nanotechnol. 2008 Sep;8(9):4377-81.

Abstract

This work develops a new process of growing well ordered ZnO nanorods in large scale on the Si(111) substrate. Nanosphere lithography (NSL) was adopted to produce a matrix in an extensive area. A pattern with a controlled amount of gold was formed through the nanosphere mask. The ZnO nanorods were then grown on a patterned Au/Si substrate through a metal catalytic vapor-liquid-solid (VLS) process. The structure and characteristics of ZnO nanorods were investigated by XRD, SEM and TEM. The hexagonal nanorods were dominated at (0002) direction with a lattice constant of approximately 5.03 A. The optoelectronical properties were studied by PL emission spectroscopy. A strong UV emission at 380 nm was observed. The band gap of the single ZnO nanorod was directly measured to be 3.36 eV using a conductive AFM. The superiority of patterned ZnO nanorods indicates their great potential in field emission display arrays.

摘要

这项工作开发了一种在Si(111)衬底上大规模生长有序ZnO纳米棒的新工艺。采用纳米球光刻(NSL)在大面积上制备基质。通过纳米球掩膜形成具有可控金量的图案。然后通过金属催化气-液-固(VLS)工艺在图案化的Au/Si衬底上生长ZnO纳米棒。通过XRD、SEM和TEM研究了ZnO纳米棒的结构和特性。六方纳米棒在(0002)方向占主导,晶格常数约为5.03 Å。通过PL发射光谱研究了光电性能。在380 nm处观察到强烈的紫外发射。使用导电原子力显微镜直接测量单个ZnO纳米棒的带隙为3.36 eV。图案化ZnO纳米棒的优越性表明它们在场发射显示阵列中具有巨大潜力。

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