De Leonardis Francesco, Tsarev Andrei V, Passaro Vittorio M
Photonics Research Group, Dipartimento di Ingegneria dell'Ambiente e per lo Sviluppo Sostenibile, Politecnico di Bari, viale del Turismo n. 8, 74100 Taranto, Italy.
Opt Express. 2008 Dec 22;16(26):21333-8. doi: 10.1364/oe.16.021333.
We present analysis and simulation of novel silicon-on-insulator (SOI) heterogeneous waveguides with thermo-optic phase shifters. New structure design contains a p-n junction on both sides of SOI ridge waveguide with 220 nm x 35 microm silicon core. Strongly mode-dependent optical losses (by additional free charge absorption) provide quasi-singe-mode behavior of wide waveguide with mode size approximately 10 microm. Local heater produces an efficient phase shifting by small temperature increase (DeltaT approximately 2K), switching power (< 40 mW) and switching time (< 10 micros). Mode optical losses are significantly decreased at high heating (DeltaT approximately 120 K).
我们展示了带有热光相移器的新型绝缘体上硅（SOI）异质波导的分析与模拟。新的结构设计在具有220纳米×35微米硅芯的SOI脊形波导两侧包含一个p-n结。强烈的模式相关光损耗（通过额外的自由电荷吸收）使得具有约10微米模式尺寸的宽波导呈现准单模行为。局部加热器通过小幅度的温度升高（ΔT约为2K）、开关功率（<40毫瓦）和开关时间（<10微秒）产生高效的相移。在高温加热（ΔT约为120K）时，模式光损耗显著降低。
